• Ph D, Electrical & Computer Engineering, University of California, 2008

Books

Rongming Chu and Keisuke Shinohara, 2019, III-Nitride Electronic Devices, Academic Press

Journal Articles

Mahjabin Mahfuz, Farshid Reza, Xingyu Liu, Rongming Chu, Maik Lang, Michael Snure, Xing Wang and Mia Jin, 2024, "Microstructural changes in GaN and AlN under 950?MeV Au swift heavy ion irradiation", Applied Physics Letters, 124, (11)

Jesse T. Kemmerling, Rian Guan, Mansura Sadek, Yixin Xiong, Jianan Song, Sang-Woo Han, Sundar Isukapati, Woongje Sung and Rongming Chu, 2024, "GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching", IEEE Transactions on Electron Devices, 71, (2), pp. 1153-1159

Mansura Sadek, Sang-Woo Han, Jianan Song, James C Gallagher, Travis J Anderson and Rongming Chu, 2022, "High-Temperature Static and Dynamic Characteristics of 4.2-kV GaN Super-Heterojunction pn Diodes", IEEE Transactions on Electron Devices, 69, (4), pp. 1912--1917

Jesse T Kemmerling, Rian Guan, Mansura Sadek, Sundar Isukapati, Woongje Sung, Sang-Woo Han and Rongming Chu, 2022, "Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes", IEEE Electron Device Letters, 43, (5), pp. 701--704

Sang-Woo Han, Jianan Song, Mansura Sadek, Alex Molina, Mona A. Ebrish, Suzanne E Mohney, Travis J. Anderson and Rongming Chu, 2021, "12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes", IEEE TRANSACTIONS ON ELECTRON DEVICES, 68, (11), pp. 5736-5741

Kevin Ferri, Elizabeth A. Paisley, Chris DiAntonio, Sang-Woo Han, Rongming Chu and Jon-Paul Maria, 2021, "Investigation of phase evolution within ZnO-Bi2O3 varistors utilizing thin film prototypes", JOURNAL OF MATERIALS SCIENCE, 56, (22), pp. 12740-12752

Jianan Song, Sang-Woo Han, Haoting Luo, Jaime Rumsey, Jacob H. Leach and Rongming Chu, 2021, "Study of interface trap density of AlOxNy/GaN MOS structures", APPLIED PHYSICS LETTERS, 119, (12)

Michael R Hontz, Rongming Chu and Raghav Khanna, 2020, "Effect of Substrate Choice on Transient Performance of Lateral GaN FETs", IEEE Journal of the Electron Devices Society, 8, pp. 331--335

Sang-Woo Han, Jianan Song, Sang Ha Yoo, Ziguang Ma, Robert M Lavelle, David W Snyder, Joan M Redwing, Thomas N Jackson and Rongming Chu, 2020, "Experimental Demonstration of Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching", IEEE Electron Device Letters, 41, (12), pp. 1758--1761

J Wisch and Rongming Chu, 2020, "Exploring benefits of composition grading for forward-IV characteristics of In1- xGaxAs LEDs for cryogenic applications", Journal of Applied Physics, 128, (17), pp. 175701

Rongming Chu, 2020, "(Invited Perspective) GaN power switches on the rise: Demonstrated benefits and unrealized potentials", Applied Physics Letters, 116, (9), pp. 090502

Sang-Woo Han, Jianan Song and Rongming Chu, 2019, "Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode", IEEE Transactions on Electron Devices, 67, (1), pp. 69--74

Jianan Song, Sang-Woo Han and Rongming Chu, 2019, "High-Q GaN Varactors for mm-Wave Applications: A Physics-Based Simulation Study", IEEE Transactions on Electron Devices, 66, (10), pp. 4134-4139

H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu and others, 2018, "The 2018 GaN power electronics roadmap", Journal of Physics D: Applied Physics, 51, (16), pp. 163001

Michael R Hontz, Yu Cao, Mary Chen, Ray Li, Austin Garrido, Rongming Chu and Raghav Khanna, 2017, "Modeling and Characterization of Vertical GaN Schottky Diodes With AlGaN Cap Layers", IEEE Transactions on Electron Devices, 64, (5), pp. 2172--2178

Yu Cao, Ray Li, Adam J Williams, Rongming Chu, Andrea L Corrion and Ryan Chang, 2017, "Non-polar GaN film growth on (010) gallium oxide substrate by metal organic chemical vapor deposition", Journal of Materials Research, 32, (9), pp. 1611--1617

Rongming Chu, Yu Cao, Mary Chen, Ray Li and Daniel Zehnder, 2016, "An experimental demonstration of GaN CMOS technology", IEEE Electron Device Letters, 37, (3), pp. 269--271

Y Cao, Rongming Chu, R Li, M Chen, R Chang and B Hughes, 2016, "High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth", Applied Physics Letters, 108, (6), pp. 062103

Y Cao, Rongming Chu, R Li, M Chen and AJ Williams, 2016, "Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier", Applied Physics Letters, 108, (11), pp. 112101

Ray Li, Yu Cao, Mary Chen and Rongming Chu, 2016, "600 V/1.7 Omega Normally-Off GaN Vertical Trench Metal-Oxide-Semiconductor Field-Effect Transistor", IEEE Electron Device Letters, 37, (11), pp. 1466-1469

David F. Brown, Keisuke Shinohara, Andrea L. Corrion, Rongming Chu, Adam Williams, Joel C. Wong, Ivan Alvarado-Rodriguez, Robert Grabar, Michael Johnson, Colleen M. Butler, Dayward Santos, Shawn D. Burnham, John Robinson, Daniel Zehnder, Samuel Jungjin Kim, Thomas C. Oh and Miroslav Micovic, 2013, "High-Speed, Enhancement-Mode GaN Power Switch With Regrown n plus GaN Ohmic Contacts and Staircase Field Plates", IEEE Electron Device Letters, 34, (9), pp. 1118-1120

Dong Tan, Alex Huang, Jin Wang, Burak Ozpineci, Siddharth Rajan, Yifeng Wu, Madhu Chinthavali, Anup Bhalla, Kevin Chen, Rongming Chu and others, 2013, "The 1st IEEE Workshop on Wide Bandgap Power Devices and Application WiPDA 2013 Leadship"

Rongming Chu, Andrea Corrion, Mary Chen, Ray Li, Danny Wong, Daniel Zehnder, Brian Hughes and Karim Boutros, 2011, "1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance", IEEE Electron Device Letters, 32, (5), pp. 632--634

Masataka Higashiwaki, Yi Pei, Rongming Chu and Umesh K Mishra, 2011, "Effects of barrier thinning on small-signal and 30-GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors", IEEE Transactions on Electron Devices, 58, (6), pp. 1681--1686

T Roy, EX Zhang, YS Puzyrev, X Shen, DM Fleetwood, RD Schrimpf, G Koblmueller, Rongming Chu, C Poblenz, N Fichtenbaum and others, 2011, "Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors", Applied Physics Letters, 99, (20), pp. 203501

Masataka Higashiwaki, Yi Pei, Rongming Chu and Umesh K Mishra, 2011, "Small-signal and 30 GHz power characteristics of AlGaN/GaN heterostructure field-effect transistors with thin AlGaN barrier layers--Effects of AlGaN barrier thinning", IEICE Technical Report; IEICE Tech. Rep., 111, (338), pp. 13--17

Z Chen, Y Pei, Rongming Chu, S Newman, D Brown, R Chung, S Keller, SP DenBaars, S Nakamura and UK Mishra, 2010, "Growth and characterization of AlGaN/GaN/AlGaN field effect transistors", physica status solidi c, 7, (10), pp. 2404--2407

Koblm\"uller, G, Rongming Chu, A Raman, UK Mishra and JS Speck, 2010, "High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels", Journal of Applied Physics, 107, (4), pp. 043527

Yi Pei, Kenneth J Vampola, Zhen Chen, Rongming Chu, Steven P DenBaars and Umesh K Mishra, 2009, "AlGaN/GaN HEMT with a transparent gate electrode", IEEE Electron Device Letters, 30, (5), pp. 439--441

David F Brown, Rongming Chu, Stacia Keller, Steven P DenBaars and Umesh K Mishra, 2009, "Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition", Applied Physics Letters, 94, (15), pp. 153506

Z Chen, Y Pei, S Newman, Rongming Chu, D Brown, R Chung, S Keller, SP Denbaars, S Nakamura and UK Mishra, 2009, "Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer", Applied Physics Letters, 94, (11), pp. 112108

Rongming Chu, Zhen Chen, Yi Pei, Scott Newman, Steven P DenBaars and Umesh K Mishra, 2009, "MOCVD-grown AlGaN buffer GaN HEMTs with V-gates for microwave power applications", IEEE Electron Device Letters, 30, (9), pp. 910--912

Masataka Higashiwaki, Zhen Chen, Rongming Chu, Yi Pei, Stacia Keller, Umesh K. Mishra, Nobumitsu Hirose, Toshiaki Matsui and Takashi Mimura, 2009, "A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors", Applied Physics Letters, 94, (5)

Rongming Chu, Likun Shen, Nicholas Fichtenbaum, David Brown, Zhen Chen, Stacia Keller, Steven P. DenBaars and Umesh K. Mishra, 2008, "V-gate GaNHEMTs for X-band power applications", IEEE Electron Device Letters, 29, (9), pp. 974-976

Rongming Chu, Likun Shen, Nicholas Fichtenbaum, Zhen Chen, Stacia Keller, Steven P DenBaars and Umesh K Mishra, 2008, "Correlation between DC--RF dispersion and gate leakage in deeply recessed GaN/AlGaN/GaN HEMTs", IEEE Electron Device Letters, 29, (4), pp. 303--305

Gregor Koblmuller, Rongming Chu, Feng Wu, Umesh K Mishra and James S Speck, 2008, "Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime", Applied Physics Express, 1, (6), pp. 061103

Y Pei, Rongming Chu, L Shen, NA Fichtenbaum, Z Chen, D Brown, S Keller, SP Denbaars and UK Mishra, 2008, "Effect of Al composition and gate recess on power performance of AlGaN/GaN high-electron mobility transistors", IEEE Electron Device Letters, 29, (4), pp. 300--302

Rongming Chu, Christiane Poblenz, Man Hoi Wong, Sansaptak Dasgupta, Siddharth Rajan, Yi Pei, Felix Recht, Likun Shen, James S Speck and Umesh K Mishra, 2008, "Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, 1, (6), pp. 061101

S Keller, CS Suh, NA Fichtenbaum, M Furukawa, Rongming Chu, Z Chen, K Vijayraghavan, S Rajan, SP DenBaars, JS Speck and others, 2008, "Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures", Journal of Applied Physics, 104, (9), pp. 093510

Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L Swenson, David F Brown, Stacia Keller, Steven P DenBaars, James S Speck and Umesh K Mishra, 2008, "N-face metal--insulator--semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, 29, (10), pp. 1101--1104

Rongming Chu, Likun Shen, Nicholas Fichtenbaum, David Brown, Stacia Keller and Umesh K Mishra, 2008, "Plasma treatment for leakage reduction in AlGaN/GaN and GaN Schottky contacts", IEEE Electron Device Letters, 29, (4), pp. 297--299

S Keller, CS Suh, Z Chen, Rongming Chu, S Rajan, NA Fichtenbaum, M Furukawa, SP DenBaars, JS Speck and UK Mishra, 2008, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, 103, (3), pp. 033708

Rongming Chu, Zhen Chen, Steven P DenBaars and Umesh K Mishra, 2008, "V-gate GaN HEMTs with engineered buffer for normally off operation", IEEE Electron Device Letters, 29, (11), pp. 1184--1186

Y Pei, C Poblenz, AL Corrion, Rongming Chu, L Shen, JS Speck and UK Mishra, 2008, "X-and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE", Electronics Letters, 44, (9), pp. 1

YC Kong, Rongming Chu, YD Zheng, CH Zhou, SL Gu, R Zhang, P Han, Y Shi and RL Jiang, 2007, "Function of quantum-confinement effect in the AlGaN/ AlN/ GaN heterostructure with an AlN interfacial layer", Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 25, (3), pp. 873--876

Man Hoi Wong, Siddharth Rajan, Rongming Chu, Palacios, Tom\'as, Chang-Soo Suh, Lee S McCarthy, Stacia Keller, James S Speck and Umesh K Mishra, 2007, "N-face high electron mobility transistors with a GaN-spacer", physica status solidi (a), 204, (6), pp. 2049--2053

Christiane Poblenz, Andrea L Corrion, Felix Recht, Chang Soo Suh, Rongming Chu, Likun Shen, James S Speck and Umesh K Mishra, 2007, "Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz", IEEE Electron Device Letters, 28, (11), pp. 945--947

Yi Pei, Rongming Chu, Nicholas A Fichtenbaum, Zhen Chen, David Brown, Likun Shen, Stacia Keller, Steven P DenBaars and Umesh K Mishra, 2007, "Recessed slant gate AlGaN/GaN high electron mobility transistors with 20.9 W/mm at 10 GHz", Japanese Journal of Applied Physics, 46, (12L), pp. L1087

Rongming Chu, Chang Soo Suh, Man Hoi Wong, Nicholas Fichtenbaum, David Brown, Lee McCarthy, Stacia Keller, Feng Wu, James S. Speck and Umesh K. Mishra, 2007, "Impact of CF4 plasma treatment on GaN", IEEE Electron Device Letters, 28, (9), pp. 781-783

YC Kong, Rongming Chu, YD Zheng, CH Zhou, B Shen, SL Gu, R Zhang, P Han, Y Shi and RL Jiang, 2006, "Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure", physica status solidi (a), 203, (5), pp. 1018--1023

Yugang Zhou, Deliang Wang, Rongming Chu, Chak-Wah Tang, Yundong Qi, Zhengdong Lu, Kevin J Chen and Kei May Lau, 2005, "Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition", Journal of Electronic Materials, 34, (1), pp. 112--118

Yugang Zhou, Rongming Chu, Jie Liu, Kevin J Chen and Kei May Lau, 2005, "Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth", physica status solidi (c), 2, (7), pp. 2663--2667

Jie Liu, Yugang Zhou, Rongming Chu, Yong Cai, Kevin J Chen and Kei May Lau, 2005, "Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs", IEEE Electron Device Letters, 26, (3), pp. 145--147

YF Mei, ZM Li, Rongming Chu, ZK Tang, GG Siu, Ricky KY Fu, Paul K Chu, WW Wu and KW Cheah, 2005, "Synthesis and optical properties of germanium nanorod array fabricated on porous anodic alumina and Si-based templates", Applied Physics Letters, 86, (2), pp. 021111

Rongming Chu, Yugang Zhou, Jie Liu, Deliang Wang, Kevin J Chen and Kei May Lau, 2005, "AlGaN-GaN double-channel HEMTs", IEEE Transactions on electron devices, 52, (4), pp. 438--446

Tomislav Suligoj, Haitao Liu, Johnny KO Sin, Kenneth Tsui, Rongming Chu, Kevin J Chen, Petar Biljanovic and Kang L Wang, 2004, "A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs", Solid-State Electronics, 48, (10-11), pp. 2047--2050

Rongming Chu, Yu Gang Zhou, Kevin Jing Chen and Kei May Lau, 2003, "Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures", physica status solidi (c), (7), pp. 2400--2403

Rongming Chu, YD Zheng, YG Zhou, SL Gu, B Shen and R Zhang, 2003, "Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer", Optical Materials, 23, (1-2), pp. 207--210

Rongming Chu, YD Zheng, YG Zhou, SL Gu, B Shen, R Zhang, RL Jiang, P Han and Y Shi, 2003, "Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors", Applied Physics A, 77, (5), pp. 669--671

DJ Xi, YD Zheng, P Chen, R Chu, SL Gu, B Shen and R Zhang, 2003, "Study on the AlN/Si (111) interface properties", Optical Materials, 23, (1-2), pp. 143--146

YC Kong, YD Zheng, Rongming Chu and SL Gu, 2003, "Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures", Acta Physica Sinica, 52, (7), pp. 1756--1760

Rongming Chu, YD Zheng, YG Zhou, P Han, B Shen and SL Gu, 2002, "Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors", Applied Physics A, 75, (3), pp. 387--389

Rongming Chu, YG Zhou, YD Zheng, P Han, B Shen and SL Gu, 2001, "Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors", Applied Physics Letters, 79, (14), pp. 2270--2272

Conference Proceedings

Danielle Lester, Mark Cairnie, Christina DiMarino, Sang-Woo Han and Rongming Chu, 2023, "Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module", IEEE

Sang-Woo Han, Mansura Sadek, Jesse T Kemmerling, Rian Guan and Rongming Chu, 2022, "8.85-kV/0.72-A Charge-Balanced GaN Super-Heterojunction Schottky Barrier Diode", pp. 119--121

Rongming Chu, 2021, "GaN MOS Structures with Low Interface Trap Density", 314, pp. 79--83

Sang-Woo Han, Jianan Song and Rongming Chu, 2021, "GaN Super-Heterojunction Schottky Barrier Diode with Over 10 kV Blocking Voltage", 2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)

Rongming Chu, 2021, "(Invited) Processes and Characteristics of 10-Kv-Class GaN Super-Heterojunction Diodes", (30), pp. 916

Sang-Woo Han, Jianan Song and Rongming Chu, 2019, "Characteristics of P-channel GaN MOSFET up to 300° C", pp. 147--148

Bikramjit Chatterjee, Tae Kyoung Kim, Yiwen Song, James Spencer Lundh, Sang-Woo Han, Daniel Shoemaker, Jae Min Lee, Moon Uk Cho, Rongming Chu, Joon Seop Kwak and Sukwon Choi, 2019, "Enhancement of the Electrical and Thermal Performance of AlGaN/GaN HEMTs Using a Novel Resistive Field Plate Structure", Proceedings of The 2019 Eighteenth IEEE InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITHERM 2019), pp. 362-369

Grace Watt, Alan Courtay, Amy Romero, Rolando Burgos, Rongming Chu and Dushan Boroyevich, 2019, "Evaluation of an Automated Modeling Tool Applied to New 600 V, 2 A Vertical GaN Transistors", Thirty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition (APEC 2019), pp. 2920-2927

Michael R Hontz, Rongming Chu and Raghav Khanna, 2018, "TCAD modeling of a lateral GaN HEMT using empirical data", pp. 244--248

Amy Romero, Christina DiMarino, Rolando Burgos, Ray Li, Mary Chen, Yu Cao and Rongming Chu, 2017, "Static and dynamic characterization of a GaN-on-GaN 600 V, 2 A vertical transistor", pp. 413--418

Brian Hughes, Rongming Chu, James Lazar and Karim Boutros, 2015, "Increasing the switching frequency of GaN HFET converters", pp. 16--7

Zijian Li, Rongming Chu, Daniel Zehnder, Sameh Khalil, Mary Chen, Xu Chen and Karim Boutros, 2014, "Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate", pp. 257--258

Raghav Khanna, Brian Hughes, William Stanchina, Rongming Chu, Karim Boutros and Gregory Reed, 2014, "Modeling and characterization of a 300 V GaN based boost converter with 96\% efficiency at 1 MHz", pp. 92--99

Brian Hughes, James Lazar, Stephen Hulsey, Marcel Musni, Daniel Zehnder, Austin Garrido, Raghav Khanna, Rongming Chu, Sameh Khalil and Karim Boutros, 2014, "Normally-off GaN-on-Si multi-chip module boost converter with 96\% efficiency and low gate and drain overshoot", pp. 484--487

SG Khalil, L Ray, M Chen, Rongming Chu, D Zehnder, A Garrido, M Munsi, S Kim, B Hughes, K Boutros and others, 2014, "Trap-related parametric shifts under DC bias and switched operation life stress in power AlGaN/GaN HEMTs", pp. CD--4

Brian Hughes, Rongming Chu, James Lazar, Stephen Hulsey, Austin Garrido, Daniel Zehnder, Marcel Musni and Karim Boutros, 2013, "Normally-off GaN switching 400V in 1.4 ns using an ultra-low resistance and inductance gate drive", pp. 76--79

Rongming Chu, Brian Hughes, Mary Chen, David Brown, Ray Li, Sameh Khalil, Daniel Zehnder, Steve Chen, Adam Williams, Austin Garrido and others, 2013, "Normally-off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt", pp. 199--200

Karim Boutros, Rongming Chu and Brian Hughes, 2013, "Recent advances in GaN power electronics", pp. 1--4

Brian Hughes, James Lazar, Stephen Hulsey, Austin Garrido, Daniel Zehnder, Marcel Musni, Rongming Chu and Karim Boutros, 2013, "Analyzing Losses Using Junction Temperature of 300V 2.4kW 96% efficient, 1MHz GaN Synchronous Boost Converter", 2013 1st IEEE Workshop on Wide Bandgap Power Devices and Applications (WIPDA), pp. 131-134

Brian Hughes, Rongming Chu, James Lazar, Stephen Hulsey, Austin Garrido, Daniel Zehnder, Marcel Musni and Karim Boutros, 2013, "Normally-off GaN Switching 400V in 1.4ns Using an Ultra-low Resistance and Inductance Gate Drive", 2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), pp. 76-79

Rongming Chu, David Brown, Daniel Zehnder, Xu Chen, Adam Williams, Ray Li, Mary Chen, Scott Newell and Karim Boutros, 2012, "Normally-off GaN-on-Si metal-insulator-semiconductor field-effect transistor with 600-V blocking capability at 200° C", pp. 237--240

Sameh G Khalil, Rongming Chu, Ray Li, Danny Wong, Scott Newell, Xu Chen, M Chen, D Zehnder, S Kim, A Corrion and others, 2012, "Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT", pp. 310--313

Karim S Boutros, Rongming Chu and Brian Hughes, 2012, "GaN power electronics for automotive application", pp. 1--4

Rongming Chu, Daniel Zehnder, Brian Hughes and Karim Boutros, 2011, "High performance GaN-on-Si power switch: Role of substrate bias in device characteristics", pp. 223--224

AL Corrion, M Chen, Rongming Chu, SD Burnham, S Khalil, D Zehnder, B Hughes and K Boutros, 2011, "Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al2O3 gate dielectric", pp. 213--214

AL Corrion, M Chen, Rongming Chu, SD Burnham, S Khalil, D Zehnder, B Hughes and K Boutros, 2011, "Normally-off gate-recessed AlGaN/GaN-on-Si hybrid MOS-HFET with Al 2 O 3 gate dielectric", pp. 213--214

Masataka Higashiwaki, Yi Pei, Rongming Chu and Umesh K Mishra, 2009, "Small-signal and 30-GHz power performance of AlGaN/GaN HFETs without back barriers", pp. 105--106

Man Hoi Wong, Yi Pei, Rongming Chu, Siddharth Rajan, Brian L Swenson, David F Brown, Stacia Keller, Steven P DenBaars, James S Speck and Umesh K Mishra, 2008, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", pp. 201--202

Y Pei, C Suh, Rongming Chu, F Recht, L Shen, A Corrion, C Poblenz, J Speck and UK Mishra, 2007, "AlGaN/GaN HEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", pp. 129--130

Rongming Chu, Likun Shen, Nick Fichtenbaum, Stacia Keller, Andrea Corrion, Christiane Poblenz, James Speck and Umesh Mishra, 2007, "Surface treatment for leakage reduction in AlGaN/GaN HEMTs", pp. 127--128

Y Pei, C Suh, Rongming Chu, F Recht, L Shen, A Corrion, C Poblenz, J Speck and UK Mishra, 2007, "AlGaN/GaN HEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", pp. 129--130

Jie Liu, Yugang Zhou, Rongming Chu, Yong Cai, Kevin J Chen and Kei May Lau, 2004, "Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN composite-channel HEMTs with enhanced linearity", pp. 811--814

Chun San Chu, Y Zhu, Rongming Chu, KF Chen and Kei May Lau, 2004, "GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors", 3, pp. 2257--2260

Rongming Chu, Yugang Zhou, Jie Liu, Kevin Jing Chen and Kei May Lau, 2004, "Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT"

Rongming Chu, Yugang Zhou, Kevin Jing Chen and Kei May Lau, 2003, "Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors", pp. 85

Other

Yu Cao, Rongming Chu and Zijian Ray Li, 2022, "Doped gate dielectrics materials", US Patent 11,437,485

Danny M Kim, Rongming Chu, Yu Cao and Thaddeus D Ladd, 2022, "In situ fabrication of horizontal nanowires and device using same", US Patent 11,361,965

Rongming Chu, 2021, "III-nitride field-effect transistor with dual gates", US Patent 11,183,573

Danny M Kim, Rongming Chu, Yu Cao and Thaddeus D Ladd, 2021, "Semiconductor device having in situ formed horizontal nanowire structure", US Patent 10,937,650

Rongming Chu and others, 2021, "FET transistor on a III-V material structure with substrate transfer", US Patent 10,916,647

Daniel Yap, Rongming Chu and Andrew Pan, 2021, "Low modulation-voltage cryogenic diode structure", US Patent 10,910,793

Yu Cao, Rongming Chu and Zijian Ray Li, 2021, "Doped gate dielectric materials", US Patent 10,903,333

Rongming Chu, 2020, "III-nitride field-effect transistor with dual gates", US Patent 10,692,984

Rongming Chu and Yu Cao, 2020, "Digital alloy based back barrier for P-channel nitride transistors", US Patent 10,651,306

Brian Hughes and Rongming Chu, 2020, "GaN-on-sapphire monolithically integrated power converter", US Patent 10,659,032

Danny M Kim, Rongming Chu, Yu Cao and Thaddeus D Ladd, 2020, "In situ fabrication of horizontal nanowires and device using same", US Patent 10,535,518

Thaddeus D Ladd, Andrey A Kiselev, Danny M Kim and Rongming Chu, 2019, "Etched spin-qubit for high temperature operation", US Patent 10,387,792

Rongming Chu and others, 2019, "Fet transistor on a iii-v material structure with substrate transfer", US Patent App. 16/264,255

Rongming Chu and Yu Cao, 2019, "Digital alloy based back barrier for p-channel nitride transistors", US Patent App. 15/687,369

Rongming Chu, Umesh Mishra and Rakesh K Lal, 2019, "Methods of forming reverse side engineered III-nitride devices", US Patent 10,199,217

Rongming Chu, 2019, "III-Nitride transistor with enhanced doping in base layer", US Patent 10,181,400

Rongming Chu and Keisuke Shinohara, 2019, "III-Nitride Electronic Devices Preface", III-NITRIDE ELECTRONIC DEVICES, 102, pp. XI-XII

Brian Hughes and Rongming Chu, 2018, "GaN-ON-SAPPHIRE MONOLITHICALLY INTEGRATED POWER CONVERTER", US Patent 10,153,761

Rongming Chu and Yu Cao, 2018, "Lateral gan pn junction diode enabled by sidewall regrowth", US Patent 10,283,358

Yu Cao, Rongming Chu and Zijian Ray Li, 2018, "Doped Gate Dielectric Materials", US Patent App. 15/663,584

Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F Brown, Alexandros D Margomenos and Shawn D Burnham, 2018, "Stepped field plate wide bandgap field-effect transistor and method", US Patent 9,929,243

Rongming Chu, Yu Cao, LI Zijian and Adam J Williams, 2018, "Tunnel barrier schottky", US Patent 10,134,851

Rongming Chu, 2018, "III-nitride transistor with trench gate", US Patent 9,865,725

Rongming Chu and Robert Coffie, 2017, "Semiconductor devices with field plates", US Patent 9,831,315

Rongming Chu, Zijan Ray Li and Karim Boutros, 2017, "III-nitride transistor with engineered substrate", US Patent 9,773,884

Rongming Chu and Xu Chen, 2017, "Method for manufacturing a semiconductor structure having a passivated III-nitride layer", US Patent 9,761,438

Mary Y Chen and Rongming Chu, 2017, "Ta based ohmic contact", US Patent 9,646,839

Rongming Chu and Yu Cao, 2017, "Gallium nitride complementary transistors", US Patent 9,559,012

Rongming Chu, Umesh Mishra and Rakesh K Lal, 2016, "Methods of forming reverse side engineered III-nitride devices", US Patent 9,496,137

Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F Brown, Adam J Williams, Dean C Regan and Joel C Wong, 2016, "Etch-based fabrication process for stepped field-plate wide-bandgap", US Patent 9,419,122

Rongming Chu and Robert Coffie, 2016, "Semiconductor devices with field plates", US Patent 9,373,699

Rongming Chu, Mary Y Chen, Xu Chen, Karim S Boutros and others, 2016, "III-Nitride insulating-gate transistors with passivation", US Patent 9,337,332

Andrea Corrion, Keisuke Shinohara, Miroslav Micovic, Rongming Chu, David F Brown, Alexandros D Margomenos and Shawn D Burnham, 2015, "Stepped field plate wide bandgap field-effect transistor and method", US Patent 9,142,626

Rongming Chu, 2015, "Current aperture diode and method of fabricating same", US Patent 9,117,935

Rongming Chu and Robert Coffie, 2015, "Semiconductor devices with field plates", US Patent 9,111,961

Brian Hughes, Karim S Boutros, Daniel M Zehnder, Sameh G Khalil and Rongming Chu, 2015, "Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops", US Patent 9,077,335

Rongming Chu, David F Brown, Xu Chen, Adam J Williams and Karim S Boutros, 2015, "III-Nitride metal-insulator-semiconductor field-effect transistor", US Patent 9,059,200

Rongming Chu, David F Brown and Adam J Williams, 2015, "Normally-off III-nitride transistors with high threshold-voltage and low on-resistance", US Patent 8,941,118

Rongming Chu, David F Brown, Xu Chen, Adam J Williams and Karim S Boutros, 2014, "III-nitride metal insulator semiconductor field effect transistor", US Patent 8,853,709

Rongming Chu and Robert Coffie, 2014, "Semiconductor devices with field plates", US Patent 8,692,294

Andrea Corrion, Karim S Boutros, Mary Y Chen, Samuel J Kim, Rongming Chu and Shawn D Burnham, 2014, "AlGaN/GaN hybrid MOS-HFET", US Patent 8,653,559

Rongming Chu, Karim S Boutros, Shawn Burnham and others, 2013, "High current high voltage GaN field effect transistors and method of fabricating same", US Patent 8,530,978

Rongming Chu, Umesh Mishra and Rakesh K Lal, 2013, "Reverse side engineered III-nitride devices", US Patent 8,389,977

Rongming Chu and Robert Coffie, 2013, "Semiconductor devices with field plates", US Patent 8,390,000

Yifeng Wu, Umesh Mishra, Primit Parikh, Rongming Chu, Ilan Ben-Yaacov and Likun Shen, 2011, "Semiconductor heterostructure diodes", US Patent 7,898,004

Yifeng Wu and Rongming Chu, 2011, "III-nitride devices and circuits", US Patent 7,884,394

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